IXFX32N50Q Datasheet - IXYS

IXFX32N50Q Power MOSFET

HiPerFETTM Power MOSFETs Q-Class IXFK 32N50Q IXFX 32N50Q N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt VDSS ID25 500 V 32 A 500 V 32 A RDS(on) 0.16 Ω 0.16 Ω trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Symbol VDSS VGS(th) IGSS IDSS RDS(on) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD .

IXFX32N50Q Features

* z IXYS advanced low Qg process z Low gate charge and capacitances - easier to drive - faster switching z International standard packages z Low RDS (on) z Unclamped Inductive Switching (UIS) rated z Molding epoxies meet UL 94 V-0 flammability classification Advantages z PLUS 247TM package for clip or

IXFX32N50Q Datasheet (631.32 KB)