IXFX34N80 Datasheet - IXYS Corporation

IXFX34N80 Power MOSFET

HiPerFETTM Power MOSFETs Single MOSFET Die Avalanche Rated Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 PLUS 247 TO-264 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS TJ £ 150°C, RG = 2 W TC = 25°C IXFK 34N80 IXFX 34N80 V.

IXFX34N80 Features

* International standard packages

* Low RDS (on) HDMOSTM process

* Rugged polysilicon gate cell structure

* Unclamped Inductive Switching (UIS) rated

* Low package inductance - easy to drive and to protect

* Fast intrinsic rectifier Applications

IXFX34N80 Datasheet (48.10 KB)

IXFX34N80 Datasheet Preview — Preview of IXFX34N80 PDF

Datasheet Details

Part number:

IXFX34N80

Manufacturer:

IXYS Corporation

File Size:

48.10 KB

Description:

Power mosfet.

📁 Related Datasheet

IXFX30N100Q2 Power MOSFET (IXYS Corporation)

IXFX30N50Q Power MOSFET (IXYS Corporation)

IXFX320N17T2 GigaMOS TrenchT2 HiperFET Power MOSFET (IXYS)

IXFX32N100P Power MOSFET (IXYS)

IXFX32N100Q3 Power MOSFET (IXYS)

IXFX32N50Q Power MOSFET (IXYS)

IXFX32N80P Power MOSFET (IXYS)

TAGS

IXFX34N80 Power MOSFET IXYS Corporation

IXFX34N80 Distributor