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IXFX30N100Q2 - Power MOSFET

Download the IXFX30N100Q2 datasheet PDF. This datasheet also covers the IXFK30N100Q2 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 2.5 5.0 ± 200 TJ = 25°C TJ = 125°C 50 2 0.40 V V nA µA mA Ω z z VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3mA VDS = VGS, ID = 8 mA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V z z Double metal process for low gate resistance International standard packages Epoxy meet UL 94 V-0, flammability classification Avalanche energy and current rated Fast intrinsic Rectifier Advantages z.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFK30N100Q2_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXFX30N50Q Power MOSFET
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IXFX38N80Q2 Power MOSFET
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IXFX150N15 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com HiPerFETTM Power MOSFETs Q-Class IXFK 30N100Q2 IXFX 30N100Q2 VDSS = 1000 V = 30 A ID25 RDS(on) = 0.40 Ω trr ≤ 300 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr Preliminary Data Sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque TO-264 PLUS-247 TO-264 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 1000 1000 ± 30 ± 40 30 120 30 60 4.0 20 735 -55 ... +150 150 -55 ...
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