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HiPerFETTM Power MOSFETs
Single MOSFET Die Avalanche Rated
Preliminary data sheet
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 PLUS 247 TO-264 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS TJ £ 150°C, RG = 2 W TC = 25°C
IXFK 34N80 IXFX 34N80
VDSS ID25
RDS(on)
= 800 V = 34 A = 0.24 W
trr £ 250 ns
Maximum Ratings 800 800 ±20 ±30 34 136 36 64 3 5 560 -55 ... +150 150 -55 ... +150 300 V V V V A A A mJ J V/ns W °C °C °C °C
PLUS 247TM (IXFX)
G
(TAB) D
TO-264 AA (IXFK)
G D S
(TAB)
G = Gate S = Source
D = Drain TAB = Drain
0.
IXFX34N80 Datasheet
