Datasheet4U Logo Datasheet4U.com

IXFX32N80Q3 - Power MOSFET

This page provides the datasheet information for the IXFX32N80Q3, a member of the IXFK32N80Q3 Power MOSFET family.

Features

  • Low Intrinsic Gate Resistance.
  • Low Package Inductance.
  • Fast Intrinsic Rectifier.
  • Low RDS(on) and QG Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

📥 Download Datasheet

Datasheet preview – IXFX32N80Q3

📁 Similar Datasheet

Other Datasheets by IXYS

Full PDF Text Transcription

Click to expand full text
Q3-Class HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFK32N80Q3 IXFX32N80Q3 D G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 800 V 800 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150C TC = 25C 32 80 32 3 50 1000 -55 ... +150 150 -55 ... +150 A A A J V/ns W C C C Maximum Lead Temperature for Soldering 300 °C Plastic Body for 10s 260 °C Mounting Torque (TO-264) Mounting Force (PLUS247) 1.13/10 20..120 /4.5..27 Nm/lb.
Published: |