IXFX32N100Q3 Datasheet - IXYS

IXFX32N100Q3 Power MOSFET

Q3-Class HiperFETTM Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Rectifier IXFK32N100Q3 IXFX32N100Q3 D G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg L TSOLD Md FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 1000 V 1000 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C 32 A 96 A 32 A 2 J IS  IDM, VDD  VDSS, TJ  150C TC = 25C 50 1250 -55 +150.

IXFX32N100Q3 Features

* International Standard Packages

* Low Intrinsic Gate Resistance

* Avalanche Rated

* Low Package Inductance

* Fast Intrinsic Rectifier

* Low RDS(on) and QG Advantages

* High Power Density

* Easy to Mount

* Space Savings Applications

* DC-DC Converters

* B

IXFX32N100Q3 Datasheet (1.91 MB)

IXFX32N100Q3 Datasheet Preview — Preview of IXFX32N100Q3 PDF

Datasheet Details

Part number:

IXFX32N100Q3

Manufacturer:

IXYS

File Size:

1.91 MB

Description:

Power mosfet.

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IXFX32N100Q3 Power MOSFET IXYS

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