IXFX360N10T N-Channel MOSFET

INCHANGE

IXFX360N10T Description

isc N-Channel MOSFET Transistor *.

IXFX360N10T Features

* Drain Source Voltage- : VDSS= 100V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 2.9mΩ(Max)@VGS=10V
* Fast Switching
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

IXFX360N10T Applications

* Switch-Mode and Resonant-Mode Power Supplies
* DC-DC Converters
* AC and DC Motor Drives
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 360 A IDM Drai

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Datasheet Details

Part number: IXFX360N10T
Manufacturer: INCHANGE
File Size: 332.97 KB
Datasheet: IXFX360N10T-INCHANGE.pdf
Description: N-Channel MOSFET

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N-Channel MOSFET INCHANGE

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