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IXBT20N300HV - Bipolar MOS Transistor

Features

  • High Voltage Package.
  • High Blocking Voltage.
  • Anti-Parallel Diode.
  • Low Conduction Losses Symbol Test Conditions (T = 25°C Unless Otherwise Specified) J BVCES IC = 250µA, VGE = 0V VGE(th) IC = 250µA, VCE = VGE ICES VCE = 0.8.
  • VCES, VGE = 0V I GES VCE(sat) V = 0V, V = ± 20V CE GE I = 20A, V = 15V, Note 1 C GE Characteristic Values Min. Typ. Max. 3000 2.5 V 5.0 V TJ = 125°C 35 µA 1.5 mA ±100 nA 2.7 3.2 V T = 125°C 3.2 V J Advantages.
  • L.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor Not for New Design IXBT20N300HV VCES = IC110 = VCE(sat)  3000V 20A 3.2V Symbol VCES VCGR VGES V GEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg T SOLD Weight Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 20 Clamped Inductive Load TC = 25°C Plastic Body for 10s Maximum Ratings 3000 V 3000 V ± 20 V ± 30 V 50 A 20 A 140 A ICM = 130 A 1500 V 250 W -55 ... +150 °C 150 °C -55 ...
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