DSEI36-06AS Datasheet (IXYS) - Fast Recovery Epitaxial Diode

DSEI36-06AS, Fast Recovery Epitaxial Diode

Fast Recovery Epitaxial Diode (FRED) DSEI 36-06AS VRRM = 600 V IFAVM = 37 A trr = 35 ns VRSM V 600 VRRM V 600 Type DSEI 36-06AS TO-263 AB AC A A C (TAB) A = Anode, C = Cathode, TAB = Cathode Symbol IFRMS IFAVM 1 IFRM IFSM I2t T VJ T VJM T stg Ptot Weight Test Conditions TVJ = TVJM TC = 85°C; rectangular, d = 0.5 tP < 10 μs; rep.

rating, pulse width limited by TVJM TVJ = 45°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ

DSEI36-06AS Features

* z International standard surface mount package JEDEC TO-263 AB z Planar passivated chips z Very short recovery time z Extremely low switching losses z Low I -values RM z Soft recovery behaviour z Epoxy meets UL 94V-0 TO-263 AB Outline Symbol Test Conditions Characteristic Values typ. max. IR VF