DSEI30-06A Datasheet (IXYS) - Fast Recovery Epitaxial Diode

DSEI30-06A, Fast Recovery Epitaxial Diode

Fast Recovery Epitaxial Diode (FRED) DSEI 30 IFAVM = 37 A VRRM = 600 V trr = 35 ns VRSM V 640 VRRM V 600 Type DSEI 30-06A TO-247 AD AC C A A = Anode, C = Cathode C Symbol IFRMS IFAVM ÿÿx IFRM IFSM I2t TVJ TVJM Tstg Ptot Md Weight Symbol IR VF VT0 rT RthJC RthCK RthJA trr IRM Test Conditions TVJ = TVJM TC = 85°C; rectangular, d = 0.5 tP < 10 ms; rep.

rating, pulse width limited by TVJM TVJ = 45°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ = 150°C; t = 10 ms (50 Hz), sine t =

DSEI30-06A Features

* q International standard package JEDEC TO-247 AD q Planar passivated chips q Very short recovery time q Extremely low switching losses q Low I -values RM q Soft recovery behaviour q Epoxy meets UL 94V-0 Applications q Antiparallel diode for high frequency switching devices q Anti saturation diode q