DSEI19 Datasheet (IXYS Corporation) - Fast Recovery Epitaxial Diode

DSEI19, Fast Recovery Epitaxial Diode

www.DataSheet4U.com Fast Recovery Epitaxial Diode (FRED) DSEI 19 VRRM = 600 V IFAVM = 20 A trr = 35 ns VRSM V 600 VRRM V 600 Type A C TO-263 AA NC A DSEI 19-06AS C (TAB) A = Anode, C = Cathode, NC = No connection, TAB = Cathode Symbol IFRMS IFAVM ÿÿx IFRM IFSM Test Conditions TVJ = TVJM TC = 65°C; rectangular, d = 0.5 tP < 10 ms; rep.

rating, pulse width limited by TVJM TVJ = 45°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 25 20 150 100 110 85 95 50 50 36 37 -4

DSEI19 Features

* International standard surface mount package JEDEC TO-263 AA Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 q q q q q q q TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ TVJM Tstg Ptot Wei