DSEI120 Datasheet (IXYS Corporation) - Fast Recovery Epitaxial Diode

DSEI120, Fast Recovery Epitaxial Diode

Fast Recovery Epitaxial Diode (FRED) DSEI 120 IFAVM = 126 A VRRM = 600 V trr = 35 ns VRSM V 600 VRRM V 600 Type A C TO-247 AD C DSEI 120-06A A C A = Anode, C = Cathode Symbol IFRMS IFAVM ÿÿx IFAV y IFRM IFSM Test Conditions TVJ = TVJM TC = 70°C; rectangular, d = 0.5 TC = 110°C; rectangular, d = 0.5 tP < 10 m s; rep.

rating, pulse width limited by TVJM TVJ = 45°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 100 126 77 tbd 600 660 540 600 1800 1800 1450 1500 -40

DSEI120 Features

* q q q q q q q TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine I2t TVJ = 45°C t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine International standard package JEDEC TO-247 AD Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery b