DSEI30 Datasheet (IXYS) - Fast Recovery Epitaxial Diode

DSEI30, Fast Recovery Epitaxial Diode

Fast Recovery Epitaxial Diode (FRED) DSEI 30 IFAVM = 30 A VRRM = 1000 V trr = 35 ns VRSM V 1000 1000 VRRM V 1000 1000 Type A C TO-247 AD Version A ISOPLUS 247TM Version AR DSEI 30-10A DSEI 30-10AR C A C (TAB) C A Isolated back surface A = Anode, C = Cathode Symbol IFRMS IFAVM ÿÿx IFRM IFSM Test Conditions TVJ = TVJM TC = 85°C; rectangular, d = 0.5 tP < 10 ms; rep.

rating, pulse width limited by TVJM TVJ = 45°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 7

DSEI30 Features

* q q q q q TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine I2t TVJ = 45°C t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine q q q International standard package JEDEC TO-247 AD Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recover