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DSEI36-06AS - Fast Recovery Epitaxial Diode

Key Features

  • z International standard surface mount package JEDEC TO-263 AB z Planar passivated chips z Very short recovery time z Extremely low switching losses z Low I -values RM z Soft recovery behaviour z Epoxy meets UL 94V-0 TO-263 AB Outline Symbol Test Conditions Characteristic Values typ. max. IR VF VT0 rT RthJC trr IRM TVJ = 25°C TVJ = 25°C TVJ = 125°C VR = VRRM VR = 0.8.
  • VRRM VR = 0.8.
  • VRRM IF = 37 A; TVJ = 150°C TVJ = 25°C For power-loss calculations only TVJ = TVJM IF.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Fast Recovery Epitaxial Diode (FRED) DSEI 36-06AS VRRM = 600 V IFAVM = 37 A trr = 35 ns VRSM V 600 VRRM V 600 Type DSEI 36-06AS TO-263 AB AC A A C (TAB) A = Anode, C = Cathode, TAB = Cathode Symbol IFRMS IFAVM 1 IFRM IFSM I2t T VJ T VJM T stg Ptot Weight Test Conditions TVJ = TVJM TC = 85°C; rectangular, d = 0.5 tP < 10 μs; rep. rating, pulse width limited by TVJM TVJ = 45°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ = 45°C t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TC = 25°C Maximum Ratings 70 37 375 300 320 260 280 450 420 340 320 -40...+150 150 -40...