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DSEI30 - Fast Recovery Epitaxial Diode

Key Features

  • q q q q q TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine I2t TVJ = 45°C t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine q q q International standard package JEDEC TO-247 AD Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behavior Epoxy meets UL 94V-0 Version AR isolated and UL registered E153432 TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ TVJM Tstg Ptot Md.
  • FC VISOL.
  • Weight.

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Other Datasheets by IXYS (now Littelfuse)

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Fast Recovery Epitaxial Diode (FRED) DSEI 30 IFAVM = 30 A VRRM = 1000 V trr = 35 ns VRSM V 1000 1000 VRRM V 1000 1000 Type A C TO-247 AD Version A ISOPLUS 247TM Version AR DSEI 30-10A DSEI 30-10AR C A C (TAB) C A Isolated back surface * A = Anode, C = Cathode Symbol IFRMS IFAVM ÿÿx IFRM IFSM Test Conditions TVJ = TVJM TC = 85°C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM TVJ = 45°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 70 30 375 200 210 185 195 200 180 170 160 -40...+150 150 -40...+150 TC = 25°C Mounting torque mounting force with clip 50/60 Hz, RMS, t = 1 minute, leads-to-tab 138 0.8...1.2 20...