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IXFP4N100Q Power MOSFET

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Description

www.DataSheet4U.com TM HiPerFET Power MOSFETs Q-Class IXFA 4N100Q IXFP 4N100Q VDSS =1000 V = 4 A ID25 RDS(on) = 3.0 W trr £ 250 ns N-Channel Enhanc.

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Datasheet Specifications

Part number
IXFP4N100Q
Manufacturer
IXYS Corporation
File Size
110.87 KB
Datasheet
IXFP4N100Q_IXYSCorporation.pdf
Description
Power MOSFET

Features

* g g
* IXYS advanced low Qg process
* Low gate charge and capacitances - easier to drive - faster switching
* International standard packages
* Low RDS (on)
* Rated for unclamped Inductive load Switching (UIS)
* Molding epoxies meet UL 94 V-0 flammabili

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