IXFP4N100P Power MOSFET

IXYS Corporation

Description

PolarTM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFA4N100P IXFP4N100P VDSS ID25 RDS(on) = 1000.

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Datasheet Specifications

Part number: IXFP4N100P
Manufacturer: IXYS Corporation
File Size: 170.60 KB
Datasheet: IXFP4N100P_IXYSCorporation.pdf
Description: Power MOSFET

Features

* z z z z z G S D (Tab) TO-220AB (IXFP) G DS D (Tab) G = Gate S = Source D = Drain Tab = Drain 1.6mm (0.062in. ) from Case for 10s Plastic Body for 10 Seconds Mounting Force (TO-263) Mounting Torque (TO-220) TO-263 TO-220 300 260 10.65 / 2.2..14.6 1.13 / 10 2.5 3.0 International Standard Pack

Applications

* z 750 μA 3.3 z z z z Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls © 2010 IXYS CORPORATION, All Rights Reserved DS99921A(7/10) IXFA4N100P IXFP4N100P Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gf

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IXFP4N100P Power MOSFET IXYS Corporation

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