IXFP05N100M Datasheet - IXYS Corporation

IXFP05N100M High Voltage HiperFET

Preliminary Technical Information High Voltage HiperFET (Electrically Isolated Tab) IXFP05N100M RDS(on) trr VDSS ID25 = 1000V = 700mA ≤ 17Ω ≤ 300ns N-Channel Enhancement Mode Avalanche Rated OVERMOLDED TO-220 (IXFPM) OUTLINE Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight www.DataSheet4U.net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, .

IXFP05N100M Features

* Plastic overmolded tab for electrical isolation International standard package Avalanche rated Low package inductance Advantages Easy to mount Space savings High power density V 4.5 V G Isolated Tab D S D = Drain G = Gate S = Source 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mount

IXFP05N100M Datasheet (129.04 KB)