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IXFP102N15T - Power MOSFET

Features

  • z z (TO-220 & TO-247) 1.13 / 10 (TO-263) 10..65 / 2.2..14.6 2.5 3.0 6.0 International Standard Packages Avalanche Rated Weight Advantages z z z Easy to Mount Space Savings High Power Density Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 1mA VGS = ± 20V, VDS = 0V VDS = VDSS, VGS= 0V TJ = 150°C Characteristic Values Min. Typ. Max. 150 2.5 5.0 V V.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Trench Gate Power MOSFET HiperFETTM N-Channel Enhancement Mode Avalanche Rated IXFA102N15T IXFH102N15T IXFP102N15T VDSS ID25 RDS(on) trr = 150V = 102A ≤ 18mΩ ≤ 120ns TO-263 (IXFA) G S (TAB) Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md FC www.DataSheet4U.net Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C RGS = 1MΩ Continuous Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS , TJ ≤ 175°C TC = 25°C Maximum Ratings 150 150 ± 20 ± 30 102 75 300 51 750 20 455 -55 ... +175 175 -55 ... +175 V V V V A A A A mJ V/ns W °C °C °C °C °C Nmlb.in. N/lb. g g g TO-220 (IXFP) G D S (TAB) TO-247 (IXFH) G D (TAB) S D = Drain TAB = Drain G = Gate S = Source 1.6mm (0.062 in.
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