IXFP110N15T2 - Power MOSFET

Features

International standard packages.
175°C Operating Temperature.
High current handling capability.
Fast intrinsic Rectifier.
Dynamic dV/dt rated.
Low RDS(on) Advantages.
Easy to mount.
Space savings.
High power density.

IXYS Corporation

Datasheet Details

Part number	IXFP110N15T2
Manufacturer	IXYS Corporation
File Size	313.89 KB
Description	Power MOSFET
Datasheet	IXFP110N15T2 Datasheet
Additional preview pages of the IXFP110N15T2 datasheet.

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Full PDF Text Transcription

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Preliminary Technical Information TrenchT2TM HiperFET Power MOSFET IXFA110N15T2 IXFP110N15T2 VDSS = ID25 = RDS(on)  150V 110A 13m N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient Maximum Ratings 150 V 150 V  20 V  30 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS,TJ  175C TC = 25C 110 300 50 800 15 480 -55 ... +175 175 -55 ... +175 A A A mJ V/ns W  C  C  C Maximum Lead Temperature for Soldering 300 1.6 mm (0.062in.) from Case for 10s 260 Mounting Force (TO-263) Mounting Torque (TO-220) 10..65 / 2.2..14.6 1.13 / 10 °C °C N/lb Nm/lb.

Published: May 13, 2011 |