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PolarTM Power MOSFET HiPerFETTM
(Electrically Isolated Tab)
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFP12N50PM
VDSS ID25 trr
RDS(on)
= 500V = 6A ≤ 500mΩ ≤ 300ns
OVERMOLDED TO-220 (IXFP...M) OUTLINE Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight
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Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ =150°C TC = 25°C
Maximum Ratings 500 500 ± 30 ± 40 6 30 12 600 10 50 - 55 ... +150 150 - 55 ... +150 V V V V A A A mJ V/ns W °C °C °C °C °C Nm/lb.in.
IXFP12N50PM Datasheet
