Datasheet Details
- Part number
- IXFP4N100PM
- Manufacturer
- IXYS Corporation
- File Size
- 134.85 KB
- Datasheet
- IXFP4N100PM_IXYSCorporation.pdf
- Description
- Power MOSFET
IXFP4N100PM Description
Advance Technical Information PolarTM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFP4N100PM VDSS ID25.IXFP4N100PM Features
* z z z z 1.6 mm (0.062 in. ) from Case for 10 s Plastic Body for 10 s Mounting Torque 300 260 1.13/10 2.5 Plastic Overmolded Tab for Electrical Isolation Avalanche Rated Fast Intrinsic Diode Low Package Inductance Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IIXFP4N100PM Applications
* z ±100 nA 10 μA 750 μA 3.3 Ω z z z z Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls © 2010 IXYS CORPORATION, All Rights Reserved DS100295(11/10) IXFP4N100PM Symbol Test Conditions (TJ = 25°C Unless Otherwise Specif
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