IXFP4N100PM Power MOSFET

IXYS Corporation

Description

Advance Technical Information PolarTM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFP4N100PM VDSS ID25.

📥 Download Datasheet

IXFP4N100PM Datasheet Preview — Preview of IXFP4N100PM PDF

Datasheet Specifications

Part number: IXFP4N100PM
Manufacturer: IXYS Corporation
File Size: 134.85 KB
Datasheet: IXFP4N100PM_IXYSCorporation.pdf
Description: Power MOSFET

Features

* z z z z 1.6 mm (0.062 in. ) from Case for 10 s Plastic Body for 10 s Mounting Torque 300 260 1.13/10 2.5 Plastic Overmolded Tab for Electrical Isolation Avalanche Rated Fast Intrinsic Diode Low Package Inductance Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS I

Applications

* z ±100 nA 10 μA 750 μA 3.3 Ω z z z z Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls © 2010 IXYS CORPORATION, All Rights Reserved DS100295(11/10) IXFP4N100PM Symbol Test Conditions (TJ = 25°C Unless Otherwise Specif

IXFP4N100PM Distributors

📁 Related Datasheet

IXFP4N85X IXFP4N85XM IXFP110N15T2 IXFP12N65X2 IXFP12N65X2M IXFP130N10T

📌 All Tags

IXFP4N100PM Power MOSFET IXYS Corporation

IXYS Corporation IXFP4N100PM-like datasheet