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IRL2203N N-Channel MOSFET

IRL2203N Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRL2203N，IIRL2203N *.

IRL2203N Features

* Static drain-source on-resistance: RDS(on) ≤7.0mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

IRL2203N Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 30 VGS Gate-Source Voltage ±16 ID Drain Current-Continuous 116 IDM Drain Current-Single Pulsed 400 PD Total Dissipation @TC=25℃ 180 Tj Max. Operating Junction Temperature 175 Tstg Storage T

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Datasheet Details

Part number
IRL2203N
Manufacturer
INCHANGE
File Size
241.72 KB
Datasheet
IRL2203N-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE IRL2203N-like datasheet