Description
PD - 95219A l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Ava.
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon a.
Features
* form
Diode Recovery
dv/dt
Re-Applied Voltage
Body Diode Inductor Curent
Forward Drop
Ripple ≤ 5%
[VDD] [ISD]
www. irf. com
* VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET® power MOSFETs
7
IRL2203NS/LPbF
D2Pak (TO-263AB) Package Outline
Dimensions
Applications
* IRL2203NSPbF IRL2203NLPbF
HEXFET® Power MOSFET D VDSS = 30V
RDS(on) = 7.0mΩ
ID = 116A
S
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package.
