IRL2203NSPbF Power MOSFET

International Rectifier

Description

PD - 95219A l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Ava.
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon a.

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Datasheet Specifications

Part number: IRL2203NSPbF
Manufacturer: International Rectifier
File Size: 287.10 KB
Datasheet: IRL2203NSPbF-InternationalRectifier.pdf
Description: Power MOSFET

Features

* form Diode Recovery dv/dt Re-Applied Voltage Body Diode Inductor Curent Forward Drop Ripple ≤ 5% [VDD] [ISD] www. irf. com
* VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET® power MOSFETs 7 IRL2203NS/LPbF D2Pak (TO-263AB) Package Outline Dimensions

Applications

* IRL2203NSPbF IRL2203NLPbF HEXFET® Power MOSFET D VDSS = 30V RDS(on) = 7.0mΩ ID = 116A S The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package.

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IRL2203NSPbF Power MOSFET International Rectifier

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