Datasheet4U Logo Datasheet4U.com

IRL2910S N-Channel MOSFET

IRL2910S Description

Isc N-Channel MOSFET Transistor IRL2910S *.

IRL2910S Features

* With To-263(D2PAK) package
* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

IRL2910S Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±16 55 39 190 PD Total Dissipation @TC=25℃ 200 Tch Max. Operating J

📥 Download Datasheet

Preview of IRL2910S PDF
datasheet Preview Page 2

Datasheet Details

Part number
IRL2910S
Manufacturer
INCHANGE
File Size
254.09 KB
Datasheet
IRL2910S-INCHANGE.pdf
Description
N-Channel MOSFET

📁 Related Datasheet

  • IRL2910SPbF - HEXFET Power MOSFET (International Rectifier)
  • IRL2910 - HEXFET Power MOSFET (International Rectifier)
  • IRL2910L - Power MOSFET (International Rectifier)
  • IRL2910LPbF - HEXFET Power MOSFET (International Rectifier)
  • IRL2910PBF - Power MOSFET (International Rectifier)
  • IRL2203N - Power MOSFET (International Rectifier)
  • IRL2203NL - Power MOSFET (International Rectifier)
  • IRL2203NLPbF - Power MOSFET (International Rectifier)

📌 All Tags

INCHANGE IRL2910S-like datasheet