IRL2910LPbF, IRL2910SPbF Datasheet - International Rectifier

IRL2910LPbF HEXFET Power MOSFET

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer .

IRL2910LPbF Features

* L INE "L " N ote: "P " in as s embly line pos ition indicates "L ead-F ree" OR IN T E R N AT ION AL R E CT IF IE R L OGO AS S E MB L Y L OT COD E F 530S P AR T NU MB E R D AT E COD E YE AR 0 = 2 000 WEEK 02 LINE L INT E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE F 530S P AR T N U

IRL2910SPbF-InternationalRectifier.pdf