Description
IRL2203NS/L l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully .
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon a.
Features
* ay Inductance
* Ground Plane
* Low Leakage Inductance Current Transformer
-
* +
RG VGS
* dv/dt controlled by RG
* ISD controlled by Duty Factor "D"
* D. U. T. - Device Under Test
+ VDD
* Reverse Polarity of D. U. T for P-Channel
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Applications
* The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection
