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HMJE13003T, HMJE13003T_Hi - NPN EPITAXIAL PLANAR TRANSISTOR

HMJE13003T Description

HI-SINCERITY MICROELECTRONICS CORP.Spec.No.: HT200211 Issued Date : 2000.08.01 Revised Date : 2002.05.08 Page No.: 1/3 HMJE13003T NPN EPITAXIAL .
The HMJE13003T is designed for high voltage. High Speed Switch.

HMJE13003T Features

* High Speed Switching
* Low Saturation Voltage
* High Reliability TO-126 Absolute Maximum Ratings (Ta=25°C)
* Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: HMJE13003T, HMJE13003T_Hi. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
HMJE13003T, HMJE13003T_Hi
Manufacturer
Hi-Sincerity Mocroelectronics
File Size
37.19 KB
Datasheet
HMJE13003T_Hi-SincerityMocroelectronics.pdf
Description
NPN EPITAXIAL PLANAR TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: HMJE13003T, HMJE13003T_Hi.
Please refer to the document for exact specifications by model.

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NPN EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics
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