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HMJE3055T, HMJE3055T_Hi - NPN EPITAXIAL PLANAR TRANSISTOR

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This datasheet PDF includes multiple part numbers: HMJE3055T, HMJE3055T_Hi. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number HMJE3055T, HMJE3055T_Hi
Manufacturer Hi-Sincerity Mocroelectronics
File Size 41.73 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HMJE3055T_Hi-SincerityMocroelectronics.pdf
Note This datasheet PDF includes multiple part numbers: HMJE3055T, HMJE3055T_Hi.
Please refer to the document for exact specifications by model.

HMJE3055T Product details

Description

The HMJE3055T is designed for general purpose of amplifier and switching applications. Maximum Temperature Storage Temperature -55 ~ +150 °C Junction Temperature 150 °C Maximum Maximum Power Dissipation Total Power Dissipation (TC=25°C) 75 W Total Power Dissipation (TA=25°C) 0.6 W Ma

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