HFP4N65 N-Channel Enhancement Mode Field Effect Transistor

HUASHAN ELECTRONIC

Description

Shantou Huashan Electronic Devices Co., Ltd.HFP4N65 N-Channel Enhancement Mode Field Effect Transistor * General .
These are N-Channel enhancement mode silicon gate power field effect transistors.

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Datasheet Specifications

Part number: HFP4N65
Manufacturer: HUASHAN ELECTRONIC
File Size: 814.75 KB
Datasheet: HFP4N65-HUASHANELECTRONIC.pdf
Description: N-Channel Enhancement Mode Field Effect Transistor

Features

* 4A, 650V(See Note), RDS(on)

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HFP4N65 N-Channel Enhancement Mode Field Effect Transistor HUASHAN ELECTRONIC

HUASHAN ELECTRONIC HFP4N65-like datasheet