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HFP10N60S N-Channel MOSFET

HFP10N60S Description

HFP10N60S Nov 2007 HFP10N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ = 0.67 Ω ID = 9.5 A .

HFP10N60S Features

* q Originative New Design q Superior Avalanche Rugged Technology q Robust Gate Oxide Technology q Very Low Intrinsic Capacitances q Excellent Switching Characteristics q Unrivalled Gate Charge : 29 nC (Typ. ) q Extended Safe Operating Area q Lower RDS(ON) : 0.67 Ω (Typ. ) @VGS=10V q 100% Avalanche Test

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Datasheet Details

Part number
HFP10N60S
Manufacturer
SemiHow
File Size
834.08 KB
Datasheet
HFP10N60S-SemiHow.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET SemiHow
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