Datasheet Specifications
- Part number
- HFP10N60S
- Manufacturer
- SemiHow
- File Size
- 834.08 KB
- Datasheet
- HFP10N60S-SemiHow.pdf
- Description
- N-Channel MOSFET
Description
HFP10N60S Nov 2007 HFP10N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ = 0.67 Ω ID = 9.5 A .
Features
* q Originative New Design q Superior Avalanche Rugged Technology q Robust Gate Oxide Technology q Very Low Intrinsic Capacitances q Excellent Switching Characteristics q Unrivalled Gate Charge : 29 nC (Typ. ) q Extended Safe Operating Area q Lower RDS(ON) : 0.67 Ω (Typ. ) @VGS=10V q 100% Avalanche TestHFP10N60S Distributors
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