HFP10N65S N-Channel MOSFET

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Description

HFP10N65S March 2014 HFP10N65S 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ ȍ ID = 9.5 A .

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Datasheet Specifications

Part number: HFP10N65S
Manufacturer: SemiHow
File Size: 176.34 KB
Datasheet: HFP10N65S-SemiHow.pdf
Description: N-Channel MOSFET

Features

* Originative New Design
* Superior Avalanche Rugged Technology
* Robust Gate Oxide Technology
* Very Low Intrinsic Capacitances
* Excellent Switching Characteristics
* Unrivalled Gate Charge : 29 nC (Typ. )
* Extended Safe Operating Area
* Lower RDS(ON) ȍ7S

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HFP10N65S N-Channel MOSFET SemiHow

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