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HFP10N65S N-Channel MOSFET

HFP10N65S Description

HFP10N65S March 2014 HFP10N65S 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ ȍ ID = 9.5 A .

HFP10N65S Features

* Originative New Design
* Superior Avalanche Rugged Technology
* Robust Gate Oxide Technology
* Very Low Intrinsic Capacitances
* Excellent Switching Characteristics
* Unrivalled Gate Charge : 29 nC (Typ. )
* Extended Safe Operating Area
* Lower RDS(ON) ȍ 7S

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Datasheet Details

Part number
HFP10N65S
Manufacturer
SemiHow
File Size
176.34 KB
Datasheet
HFP10N65S-SemiHow.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET SemiHow
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