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HFP4N50 N-Channel MOSFET

HFP4N50 Description

HFP4N50 July 2005 HFP4N50 500V N-Channel MOSFET BVDSS = 500 V RDS(on) typ = 2.0 Ω ID = 3.4 A .

HFP4N50 Features

*  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 13 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 2.0 Ω (Typ. ) @VGS=10V  100% Avalanche Teste

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Datasheet Details

Part number
HFP4N50
Manufacturer
SemiHow
File Size
675.91 KB
Datasheet
HFP4N50-SemiHow.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET SemiHow
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