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HMS6N10PR - N-Channel Super Trench Power MOSFET

H&M Semiconductor

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Datasheet Details

Part number	HMS6N10PR
Manufacturer	H&M Semiconductor
File Size	686.84 KB
Description	N-Channel Super Trench Power MOSFET
Datasheet	HMS6N10PR-HMSemiconductor.pdf

HMS6N10PR Product details

Description

The HMS6N10PR uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Features

VDS =100V,ID =6A RDS(on)＜115mΩ（at VGS=10V RDS(on)＜130mΩ（at VGS=4.5V.
Excellent gate charge x RDS(on) product(FOM).
Very low on-resistance RDS(on).
150 °C operating temperature.
Pb-free lead plating.
100% UIS tested.

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Published: Jul 1, 2025 |