HMS60N06D - N-Channel Super Trench Power MOSFET

H&M Semiconductor

Datasheet Details

Part number	HMS60N06D
Manufacturer	H&M Semiconductor
File Size	464.20 KB
Description	N-Channel Super Trench Power MOSFET
Datasheet	HMS60N06D-HMSemiconductor.pdf

The HMS60N06D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

VDS =60V,ID =60A RDS(ON)=4.4mΩ (typical) @ VGS=10V RDS(ON)=6.4mΩ (typical) @ VGS=4.5V.
Excellent gate charge x RDS(on) product(FOM).
Very low on-resistance RDS(on).
150 °C operating temperature.
Pb-free lead plating.
100% UIS tested Schematic diagram Marking and pin assignment.

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Published: Jul 15, 2025 |