HMS100N06KA Datasheet - H&M Semiconductor

HMS100N06KA N-Channel Super Trench Power MOSFET

The HMS100N06KA uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switchin.

HMS100N06KA Features

* VDS =60V,ID =100A RDS(ON) < 6.0mΩ @ VGS=10V (Typ:4.8mΩ) RDS(ON) < 7.5mΩ @ VGS=4.5V (Typ:6.1mΩ)

* Excellent gate charge x RDS(on) product

* Very low on-resistance RDS(on)

* 175 °C operating temperature

* Pb-free lead plating

* 100% UIS tested Application

* DC/DC Converte

HMS100N06KA-HMSemiconductor.pdf

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Datasheet Details

Part number:

HMS100N06KA

Manufacturer:

H&M Semiconductor

File Size:

771.88 KB

Description:

N-channel super trench power mosfet.

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HMS100N06KA HMS100N06KA N-Channel Super Trench Power MOSFET H&M Semiconductor

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