HMS100N85D, HMS100N85 Datasheet - H&M Semiconductor

HMS100N85D N-Channel Super Trench II Power MOSFET

The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency.

HMS100N85D Features

* VDS =85V,ID =100A RDS(ON)=5.4mΩ , typical (TO-220)@ VGS=10V RDS(ON)=5.4mΩ , typical (TO-263)@ VGS=10V

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 175 °C operating temperature

* Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! TO-220

HMS100N85-HMSemiconductor.pdf

HMS100N85D Datasheet Preview — This datasheet PDF includes multiple part numbers: HMS100N85D, HMS100N85. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

HMS100N85D, HMS100N85

Manufacturer:

H&M Semiconductor

File Size:

737.70 KB

Description:

N-channel super trench ii power mosfet.

Note:

This datasheet PDF includes multiple part numbers: HMS100N85D, HMS100N85.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

HMS100N85 N-Channel Super Trench II Power MOSFET (H&M Semiconductor)

HMS100N06KA N-Channel Super Trench Power MOSFET (H&M Semiconductor)

HMS100N15 N-Channel Super Trench Power MOSFET (H&M Semiconductor)

HMS100N20 N-Channel Super Trench II Power MOSFET (H&M Semiconductor)

HMS100N20D N-Channel Super Trench II Power MOSFET (H&M Semiconductor)

HMS10DN10Q Dual N-Channel Enhancement Mode MOSFET (H&M Semiconductor)

HMS11N65D 650V Super-Junction MOSFET (H&M Semiconductor)

HMS11N65F 650V N-Channel Super Junction MOSFET (H&M Semiconductor)

TAGS

HMS100N85D HMS100N85 N-Channel Super Trench Power MOSFET H&M Semiconductor

HMS100N85D Distributor