HM3N30R - Silicon N-Channel Power MOSFET

H&M Semiconductor

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Datasheet Details

Part number	HM3N30R
Manufacturer	H&M Semiconductor
File Size	510.96 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	HM3N30R-HMSemiconductor.pdf

HM3N30R Product details

Description

VDSS 300 V HM3N30R, the silicon N-channel Enhanced ID 3 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 2.5 W which reduce the conduction loss, improve switching RDS(ON)TYP 2.6 Ω performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is SOT-223, which accords with the RoHS standard.

Features

l Fast Switching l Low ON Resistance(Rdson≤3.2Ω) l Low Gate Charge (Typical Data:5nC) l Low Reverse transfer capacitances(Typical:4.5pF) l 100% Single Pulse avalanche energy Test.

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Published: Jul 1, 2025 |