Datasheet4U Logo Datasheet4U.com

HM3N30R Datasheet - H&M Semiconductor

HM3N30R Silicon N-Channel Power MOSFET

VDSS 300 V HM3N30R, the silicon N-channel Enhanced ID 3 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 2.5 W which reduce the conduction loss, improve switching RDS(ON)TYP 2.6 Ω performance and enhance the avalanche energy. The transistor can be used in .

HM3N30R Features

* l Fast Switching l Low ON Resistance(Rdson≤3.2Ω) l Low Gate Charge (Typical Data:5nC) l Low Reverse transfer capacitances(Typical:4.5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of LCD Power and adaptor. Absolute（Tc= 25℃ unless otherwise specified）： Symbol VDSS

HM3N30R-HMSemiconductor.pdf

Preview of HM3N30R PDF
HM3N30R Datasheet Preview Page 2 HM3N30R Datasheet Preview Page 3

Datasheet Details

Part number:

HM3N30R

Manufacturer:

H&M Semiconductor

File Size:

510.96 KB

Description:

Silicon n-channel power mosfet.

HM3N30R Distributor

📁 Related Datasheet

HM3N10 N-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)

HM3N10AMR N-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)

HM3N10MR N-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)

HM3N10PR N-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)

HM3N20PR 200V N-Channel Enhancement Mode MOSFET (H&M Semiconductor)

HM3N40PR Silicon N-Channel Power MOSFET (H&M Semiconductor)

HM3N80 Silicon N-Channel Power MOSFET (H&M Semiconductor)

HM3N80F Silicon N-Channel Power MOSFET (H&M Semiconductor)

TAGS

HM3N30R HM3N30R Silicon N-Channel Power MOSFET H&M Semiconductor