HM3N10MR N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

HM3N10MR N-Channel Enhancement Mode Power MOSFET .
The HM3N10MR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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Datasheet Specifications

Part number: HM3N10MR
Manufacturer: H&M Semiconductor
File Size: 514.16 KB
Datasheet: HM3N10MR-HMSemiconductor.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* VDS = 100V,ID = 3A RDS(ON)

HM3N10MR Distributors

📁 Related Datasheet

HM3-6514-9 HM3-6514B-9 HM3-6514S-9 HM3-65764 HM3-65787 HM3-65788

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HM3N10MR N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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