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HM3N10 N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

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Description

HM1 N-Channel Enhancement Mode Power MOSFET .
The HM1 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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Datasheet Specifications

Part number: HM3N10
Manufacturer: H&M Semiconductor
File Size: 400.03 KB
Datasheet: HM3N10-HMSemiconductor.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* VDS = 100V,ID = 2A RDS(ON) 1mΩ 7S@ VGS=10V RDS(ON) 1mΩ 7S@ VGS=4.5V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current

HM3N10 Distributors

📁 Related Datasheet

HM3-6514-9 HM3-6514B-9 HM3-6514S-9 HM3-65764 HM3-65787 HM3-65788

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HM3N10 N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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