HM3N150A Datasheet - H&M Semiconductor

HM3N150A - silicon N-channel Enhanced VDMOSFET

HM3N150A the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and h.

HM3N150A Features

* Fast Switching

* Low ON Resistance(Rdson≤8.0Ω)

* Low Gate Charge (Typical Data: 9.3nC)

* Low Reverse transfer capacitances(Typical:2.4 pF)

* 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（TJ= 25℃ unless otherwi

HM3N150A-HMSemiconductor.pdf