HM3N10AMR N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

HM3N10AMR N-Channel Enhancement Mode Power MOSFET .
The HM3N10AMR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

📥 Download Datasheet

HM3N10AMR Datasheet Preview — Preview of HM3N10AMR PDF

Datasheet Specifications

Part number: HM3N10AMR
Manufacturer: H&M Semiconductor
File Size: 759.13 KB
Datasheet: HM3N10AMR-HMSemiconductor.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* VDS = 100V,ID = 3A RDS(ON)

HM3N10AMR Distributors

📁 Related Datasheet

HM3-6514-9 HM3-6514B-9 HM3-6514S-9 HM3-65764 HM3-65787 HM3-65788

📌 All Tags

HM3N10AMR N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

H&M Semiconductor HM3N10AMR-like datasheet