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HM3N10AMR N-Channel Enhancement Mode Power MOSFET

HM3N10AMR Description

HM3N10AMR N-Channel Enhancement Mode Power MOSFET .
The HM3N10AMR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

HM3N10AMR Features

* VDS = 100V,ID = 3A RDS(ON)

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Datasheet Details

Part number
HM3N10AMR
Manufacturer
H&M Semiconductor
File Size
759.13 KB
Datasheet
HM3N10AMR-HMSemiconductor.pdf
Description
N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET H&M Semiconductor
H&M Semiconductor HM3N10AMR-like datasheet