HM3416B N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

HM3416B N-Channel Enhancement Mode Power MOSFET .
The HM3416B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.

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Datasheet Specifications

Part number: HM3416B
Manufacturer: H&M Semiconductor
File Size: 593.76 KB
Datasheet: HM3416B-HMSemiconductor.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* VDS = 20V,ID =6A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 22mΩ @ VGS=4.5V ESD Rating: 2000V HBM
* High Power and current handing capability
* Lead free product is acquired

HM3416B Distributors

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HM3416B N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

H&M Semiconductor HM3416B-like datasheet