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HM3413B - P-Channel Enhancement Mode Power MOSFET

HM3413B Description

HM3413B P-Channel Enhancement Mode Power MOSFET .
The HM3413B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

HM3413B Features

* VDS = -20V,ID = -3A RDS(ON) < 140mΩ @ VGS=-2.5V RDS(ON) < 110mΩ @ VGS=-4.5V
* High Power and current handing capability
* Lead free product is acquired

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Datasheet Details

Part number
HM3413B
Manufacturer
H&M Semiconductor
File Size
426.03 KB
Datasheet
HM3413B-HMSemiconductor.pdf
Description
P-Channel Enhancement Mode Power MOSFET

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P-Channel Enhancement Mode Power MOSFET H&M Semiconductor
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