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HM3414B - N-Channel Enhancement Mode Power MOSFET

HM3414B Description

HM3414B N-Channel Enhancement Mode Power MOSFET .
The HM3414B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

HM3414B Features

* VDS = 20V,ID = 2.9A RDS(ON) < 59mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.5V
* High Power and current handing capability
* Lead free product is acquired

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Datasheet Details

Part number
HM3414B
Manufacturer
H&M Semiconductor
File Size
380.69 KB
Datasheet
HM3414B-HMSemiconductor.pdf
Description
N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET H&M Semiconductor
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