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HM3415E - P-Channel Enhancement Mode Power MOSFET

HM3415E Description

HM3415E P-Channel Enhancement Mode Power MOSFET .
The HM3415E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.

HM3415E Features

* VDS = -20V,ID =-4A RDS(ON) < 53mΩ @ VGS=-2.5V RDS(ON) < 40mΩ @ VGS=-4.5V ESD Rating: 2500V HBM
* High Power and current handing capability
* Lead free product is acquired

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Datasheet Details

Part number
HM3415E
Manufacturer
H&M Semiconductor
File Size
482.37 KB
Datasheet
HM3415E-HMSemiconductor.pdf
Description
P-Channel Enhancement Mode Power MOSFET

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📌 All Tags

P-Channel Enhancement Mode Power MOSFET H&M Semiconductor
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