GS-065-030-6-LR Datasheet (GaN Systems) - 700V E-mode GaN transistor

GS-065-030-6-LR, 700V E-mode GaN transistor

The GS-065-030-6-LR is an enhancement mode GaN-on-Silicon power transistor.

The properties of GaN allow for high current, high voltage breakdown and high switching frequency.

GaN Systems innovates with industry leading advancements such as patented Island Technology® cell layout which realizes high-

GS-065-030-6-LR Features

* 700 V enhancement mode power transistor

* 850 V transient drain-to-source voltage

* Bottom-cooled, 8x8 mm PDFN package

* RDS(on) = 37 mΩ

* IDS,max = 40 A / IDSmax,Pulse = 67 A

* Simple gate drive requirements (0 V to 6 V)

* Transient tolerant