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GS-065-030-6-LL - 700V E-mode GaN transistor

Description

The GS-065-030-6-LL is an enhancement mode GaN-on-Silicon power transistor.

The properties of GaN allow for high current, high voltage breakdown and high switching frequency.

Features

  • 700 V enhancement mode power transistor.
  • 850 V transient drain-to-source voltage.
  • Bottom-cooled, TOLL package.
  • RDS(on) = 40 mΩ.
  • IDS,max = 40 A / IDSmax,Pulse = 67 A.
  • Simple gate drive requirements (0 V to 6 V).
  • Transient tolerant gate drive (-20 V / +10 V).
  • High switching frequency (> 1 MHz).
  • Fast and controllable fall and rise times.
  • Reverse conduction capability.
  • Zero reverse recovery loss.

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Datasheet Details

Part number GS-065-030-6-LL
Manufacturer GaN Systems
File Size 774.44 KB
Description 700V E-mode GaN transistor
Datasheet download datasheet GS-065-030-6-LL Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Features • 700 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, TOLL package • RDS(on) = 40 mΩ • IDS,max = 40 A / IDSmax,Pulse = 67 A • Simple gate drive requirements (0 V to 6 V) • Transient tolerant gate drive (-20 V / +10 V) • High switching frequency (> 1 MHz) • Fast and controllable fall and rise times • Reverse conduction capability • Zero reverse recovery loss • Source Sense (SS) pin for optimized gate drive • RoHS 3 (6+4) compliant GS-065-030-6-LL 700 V E-mode GaN transistor Datasheet Package Outline top view Circuit Symbol Applications • Bridgeless Totem Pole PFC • Industrial and Datacenter High Density Power Supply • Appliance and Industrial Motor Drives • Solar Inverter • Uninterruptable Power Supplies • Laser Drivers • LED Light
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