GS-065-030-2-L Datasheet (GaN Systems) - 650V E-mode GaN transistor

GS-065-030-2-L, 650V E-mode GaN transistor

The GS-065-030-2-L is an enhancement mode GaNon-Silicon power transistor.

The properties of GaN allow for high current, high voltage breakdown and high switching frequency.

GaN Systems innovates with industry leading advancements such as patented Island Technology® cell layout which realizes high-cu

GS-065-030-2-L Features

* 650 V enhancement mode power transistor

* 850 V transient drain-to-source voltage

* Bottom-cooled, 8x8 mm PDFN package

* RDS(on) = 50 mΩ

* IDS,max = 30 A / IDSmax,Pulse = 60 A

* Simple gate drive requirements (0 V to 6 V)

* Transient tolerant